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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
PACKAGE TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
* Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 m MAX. (VGS = 4.5 V, ID = 13 A) * Low input capacitance Ciss = 2300 pF TYP. * Logic level drive type (TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 20 50 150 45 1.0 150 -55 to +150 23 52
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.77 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18885EJ1V0DS00 (1st edition) Date Published July 2007 NS Printed in Japan
2007
2SK4078
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 25 A VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 13 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 25 A, VGS = 10 V, RG = 0
MIN.
TYP.
MAX. 1 100
UNIT
A
nA V S
1.5 7.0
2.0
2.5
Drain to Source On-state Resistance
6.3 9.5 2300 360 220 12 15 51 9
8.5 14.0
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 32 V, VGS = 10 V, ID = 50 A IF = 50 A, VGS = 0 V IF = 50 A, VGS = 0 V, di/dt = 100 A/s
45 7 13 1.5 30 26
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D18885EJ1V0DS
2SK4078
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
60
120
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
PT - Total Power Dissipation - W
50 40 30 20 10 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
1000 100
ID - Drain Current - A
) ( on DS GS
R (V
d it e Lim ) V 1i 0 =
ID(pulse)
PW =1
i
00
ID(DC)
DC
Po w
1i
s
10 1 0.1
TC = 25C Single Pulse
1i
m
s
i
er D
0 m
i
is si p
s
at io
n
Li m it e d
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125C/Wi 100
10 Rth(ch-C) = 2.77C/Wi 1 Single Pulse 0.1 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18885EJ1V0DS
3
2SK4078
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
150 VGS = 10 V
ID - Drain Current - A ID - Drain Current - A
1000 100 4.5 V 10 1 0.1 0.01 Pulsed VDS = 10 V Pulsed 0 1 2 3 4 5 Tch = -55C 25C 75C 150C
100
50
0 0 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
0.001
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
3 2.5 2 1.5 1 0.5 0 -100 VDS = 10 V ID = 1 mA -50 0 50 100 150 200
100 Tch = -55C 25C 10
1
75C 150C VDS = 10 V Pulsed
0.1 0.1 1 10 100
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20 Pulsed 16 12 VGS = 4.5 V 8 4 0 1 10 ID - Drain Current - A 100 10 V
20 Pulsed 16 12 8 4 0 0 5 10 15 20
VGS - Gate to Source Voltage - V
ID = 10 A 25 A 50 A
4
Data Sheet D18885EJ1V0DS
2SK4078
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
20 16 VGS = 4.5 V, ID = 13 A 12 8 10 V, 25 A 4 Pulsed 0 -100 -50 0 50 100 150 200
Ciss, Coss, Crss - Capacitance - pF
Ciss 1000 Coss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 100 Crss
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
100
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 12 VDD = 32 V 20 V 8V
VGS - Gate to Source Voltage - V
td(off) tr 10 tf VDD = 20 V VGS = 10 V RG = 0 1 0.1 1 10 100 td(on)
35 30 25 20 15 10 5 0 0
9
VGS
6
VDS
3 ID = 50 A 0
10
20
30
40
50
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns IF - Diode Forward Current - A
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000
VGS = 10 V
100
0V
10 di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100 IF - Diode Forward Current - A
Data Sheet D18885EJ1V0DS
5
2SK4078
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
1.0 TYP.
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
6.10.2 10.4 MAX. (9.8 TYP.)
4.0 MIN.
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
1.14 MAX. 2.3 2.3
0.760.12
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18885EJ1V0DS
0.51 MIN.
2SK4078
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
K4078
Abbreviation of part number Pb-free plating marking Lot code
RECOMMENDED SOLDERING CONDITIONS
The 2SK4078 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Infrared reflow
Soldering Conditions Maximum temperature (Package's surface temperature): 260C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Recommended Condition Symbol IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Data Sheet D18885EJ1V0DS
7
2SK4078
* The information in this document is current as of July, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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